-
1 heterojunction FET
-
2 heterojunction FET
Engineering: HJFETУниверсальный русско-английский словарь > heterojunction FET
-
3 Heterojunction FET
сущ.брит. гетероструктурный полевой транзистор, полевой транзистор на гетеропереходе, полевой транзистор на гетероструктуре -
4 Heterojunction-FET
сущ.микроэл. полевой транзистор с гетеропереходом -
5 Heterojunction FET
abbr. HFET -
6 Heterojunction-FET
microel. HIFET -
7 heterojunction FET
-
8 heterojunction FET
The New English-Russian Dictionary of Radio-electronics > heterojunction FET
-
9 heterojunction FET
nELECTRON TEC heterounión m -
10 heterojunction FET
-
11 heterojunction fet
English-Russian dictionary of electronics > heterojunction fet
-
12 FET
сокр. от field-effect transistor-
adjustable threshold FET
-
back-gated FET
-
barrier-gate FET
-
bipolar junction FET
-
bipolar FET
-
bipolar-diffused FET
-
buried-channel FET
-
charge storage junction gate FET
-
charge-coupled FET
-
compound FET
-
conductivity modulated FET
-
conductor-insulator-semiconductor FET
-
depletion mode FET
-
dual-gate FET
-
enhancement mode FET
-
ferroelectric FET
-
floating-gate FET
-
gallium-arsenide FET
-
heterojunction-gate FET
-
heterojunction FET
-
insulated-gate FET
-
internal-channel FET
-
junction-gate FET
-
junction FET
-
lateral FET
-
metallized semiconductor FET
-
metal semiconductor FET
-
metal-ferroelectric semiconductor FET
-
metal-gate FET
-
metal-insulator-semiconductor FET
-
metal-oxide-semiconductor FET
-
microwave FET
-
multichannel FET
-
n-channel FET
-
normally-off FET
-
normally-on FET
-
optical FET
-
p-channel FET
-
pinched-base FET
-
pinched FET
-
planar FET
-
polysilicon FET
-
poly FET
-
power FET
-
resistive-insulated-gate FET
-
Schottky-barrier-FET
-
Schottky-FET
-
Schottky-gate FET
-
self-aligned gate FET
-
self-aligned FET
-
short channel FET
-
single-channel FET
-
surface-channel FET
-
surface FET
-
uniform FET
-
unipolar FET
-
V-channel FET
-
vertical-channel FET
-
vertical FET
-
vertical-structure FET
-
V-groove FET -
13 FET
= field-effect transistorполевой транзистор, ПТ- barrier-gate FET
- bi-FET
- bulk FET
- bulk-channel FET
- channel-injection FET
- collector FET
- common-drain FET
- common-gate FET
- common-source FET
- depletion mode FET
- double-gate FET
- electron-conducting FET
- enhancement mode FET
- epitaxial-diffused FET
- ferroelectric FET
- floating-gate FET
- gallium-arsenide FET
- gallium-nitride FET
- grounded-drain FET
- grounded-gate FET
- grounded-source FET
- heterojunction FET
- heterojunction-gate FET
- hole-conducting FET
- induced-channel FET
- infrared metal-oxide-semiconductor FET
- insulated-gate FET
- internal-channel FET
- JG FET
- junction FET
- junction-gate FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-oxide-semiconductor FET
- metal-oxide-silicon FET
- metal-Schottky FET
- microwave FET
- MOD FET
- modulation doped FET
- monolithic FET
- multichannel FET
- multilayer-gate FET
- n-channel FET
- p-channel FET
- photoconductive FET
- photosensitive FET
- pinched-base FET
- planar FET
- p-n-junction FET
- punch-through FET
- remote-cutoff FET
- resonant-gate FET
- Schottky-barrier FET
- Schottky-gate FET
- self-aligned gate FET
- short-channel FET
- short-gate FET
- single-channel FET
- submicron gate FET
- surface-channel FET
- two-gate FET
- two-junction FET
- uniform-channel FET
- vertical FET -
14 FET
сокр. от field-effect transistorполевой транзистор, ПТ- barrier-gate FET- bi-FET- bulk FET- bulk-channel FET
- channel-injection FET
- collector FET
- common-drain FET
- common-gate FET
- common-source FET
- depletion mode FET
- double-gate FET
- electron-conducting FET
- enhancement mode FET
- epitaxial-diffused FET
- ferroelectric FET
- floating-gate FET
- gallium-arsenide FET
- gallium-nitride FET
- grounded-drain FET
- grounded-gate FET
- grounded-source FET
- heterojunction FET
- heterojunction-gate FET
- hole-conducting FET
- induced-channel FET
- infrared metal-oxide-semiconductor FET
- insulated-gate FET
- internal-channel FET
- JG FET
- junction FET
- junction-gate FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-oxide-semiconductor FET
- metal-oxide-silicon FET
- metal-Schottky FET
- microwave FET
- MOD FET
- modulation doped FET
- monolithic FET
- multichannel FET
- multilayer-gate FET
- n-channel FET
- p-channel FET
- photoconductive FET
- photosensitive FET
- pinched-base FET
- planar FET
- p-n-junction FET
- punch-through FET
- remote-cutoff FET
- resonant-gate FET
- Schottky-barrier FET
- Schottky-gate FET
- self-aligned gate FET
- short-channel FET
- short-gate FET
- single-channel FET
- submicron gate FET
- surface-channel FET
- two-gate FET
- two-junction FET
- uniform-channel FET
- vertical FETThe New English-Russian Dictionary of Radio-electronics > FET
-
15 heterojunction
-
16 heterojunction(-gate) FET
полевой транзистор с управляющим гетеропереходомАнгло-русский словарь технических терминов > heterojunction(-gate) FET
-
17 heterojunction(-gate) FET
полевой транзистор с управляющим гетеропереходомАнгло-русский словарь технических терминов > heterojunction(-gate) FET
-
18 heterojunction-gate FET
1) Техника: полевой транзистор с управляющим гетеропереходом2) Электроника: полевой транзистор с затвором на гетеропереходеУниверсальный англо-русский словарь > heterojunction-gate FET
-
19 heterojunction insulated gate FET
Semiconductors: HIGFETУниверсальный русско-английский словарь > heterojunction insulated gate FET
-
20 heterojunction-gate FET
English-Russian electronics dictionary > heterojunction-gate FET
- 1
- 2
См. также в других словарях:
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Liste elektrischer Bauelemente — Dieser Artikel listet elektrische beziehungsweise elektronische Bauelemente (auch Bauteile genannt) auf, die man für Schaltungen in der Elektrotechnik beziehungsweise Elektronik benötigt. Verschiedene elektronische Bauelemente Inhaltsverzeichnis … Deutsch Wikipedia
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
MODFET — The modulated doping field effect transistor or modulation doped field effect transistor (MODFET) is a type of a field effect transistor, also known as the High Electron Mobility Transistor (HEMT). Like other FETs, MODFETs are used in integrated… … Wikipedia
Liste elektronischer Bauelemente — Dieser Artikel listet elektrische bzw. elektronische Bauelemente (auch Bauteile genannt) auf, die man für Schaltungen in der Elektrotechnik bzw. Elektronik benötigt. Inhaltsverzeichnis 1 Grundbausteine 1.1 elektrische Leitungen 1.2 Wellenleiter … Deutsch Wikipedia
Liste elektronischer Bauteile — Dieser Artikel listet elektrische bzw. elektronische Bauelemente (auch Bauteile genannt) auf, die man für Schaltungen in der Elektrotechnik bzw. Elektronik benötigt. Inhaltsverzeichnis 1 Grundbausteine 1.1 elektrische Leitungen 1.2 Wellenleiter … Deutsch Wikipedia
transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… … Universalium
Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… … Wikipedia